| ||Professor and Deputy Director |
P. O. Box 603,
Beijing 100080 , P. R. China
Tel: (8610) 82648035
Dr. Hongjun Gao who is a Professor and Director of the Nanoscale Physics & Device Laboratory, Institute of Physics, Chinese Academy of Sciences, was born in Anhui province in 1963. He got his Ph.D. at the Peking University in 1994. He is serving as a Scientific Secretary of the International Union of Vacuum Science, Technology, and Applications IUVSTA in the triennium 2004-2007. He is now a member of the Editorial Board of the New Journal of Physics, IOP publishing, UK. From 1997 to 2000, he worked at the Oak Ridge National Laboratory as a Guest Scientist on structures and properties of nanomaterials using a unique scanning transmission electron microscopy (STEM) with 0.13 nm resolution and electron energy loss spectroscopy (EELS) at atomic resolution. In 2002, he visited Munster University and ORNL as a Visiting Professor and a Scientific Consultant. He served as a Secretary-in-General of the Forth International Conference on Nanoscale Sciences and Technology (NANO IV) held in Beijing in 1996. He has 5 international books/chapters and about 100 journal publications, among them there are 9 PRL, 3 JACS, 7 Adv, Mater., 10 APL, and 11 Phys. Rev. papers. His current research work on the conductance transition and nanorecording at a single molecular scale has been highlighted by the American Physical Society as a Physical Review Focus, the Science News, and the Nature Materials reports. His research interests are in nano-electronic materials and nano-electronic device physics, scanning probe microscopy (SPM), and novel nanostructures and physical properties, structure and physical properties of functional molecular systems at single molecular level.