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Deputy Director Gao, Hongjun
 

Professor and Deputy Director

P. O. Box 603,
Beijing 100080 , P. R. China
Tel: (8610) 82648035
E-mail: hjgao@aphy.iphy.ac.cn

Dr. Hongjun Gao who is a Professor and Director of the Nanoscale Physics & Device Laboratory, Institute of Physics, Chinese Academy of Sciences, was born in Anhui province in 1963.  He got his Ph.D. at the Peking University in 1994.  He is serving as a Scientific Secretary of the International Union of Vacuum Science, Technology, and Applications IUVSTA in the triennium 2004-2007.  He is now a member of the Editorial Board of the New Journal of Physics, IOP publishing, UK.  From 1997 to 2000, he worked at the Oak Ridge National Laboratory as a Guest Scientist on structures and properties of nanomaterials using a unique scanning transmission electron microscopy (STEM) with 0.13 nm resolution and electron energy loss spectroscopy (EELS) at atomic resolution.  In 2002, he visited Munster University and ORNL as a Visiting Professor and a Scientific Consultant. He served as a Secretary-in-General of the Forth International Conference on Nanoscale Sciences and Technology (NANO IV) held in Beijing in 1996.  He has 5 international books/chapters and about 100 journal publications, among them there are 9 PRL, 3 JACS, 7 Adv, Mater., 10 APL, and 11 Phys. Rev. papers.  His current research work on the conductance transition and nanorecording at a single molecular scale has been highlighted by the American Physical Society as a Physical Review Focus, the Science News, and the Nature Materials reports.  His research interests are in nano-electronic materials and nano-electronic device physics, scanning probe microscopy (SPM), and novel nanostructures and physical properties, structure and physical properties of functional molecular systems at single molecular level.


The Institute of Physics, Chinese Academy of Sciences P.O.Box 603,Beijing 100190,China
Tel:86-10-82649361 Fax:86-10-82649531 email: zhoumb@aphy.iphy.ac.cn
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