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Field Effect Control of Quantum Phases Using Ionic Gating
 
Date: 2018-05-24
Time: 10:00
Venue: 中科院物理研究所M楼236报告厅
Speaker: J. T. Ye 叶剑挺 associate professor

Zernike Institute for Advanced Materials University of Groningen, The Netherlands

报告人简介
Jianting Ye was born in Ningbo, Zhejiang Province, China in 1977. He obtained his B. Sc. (2000) degree from Zhejiang University, M. Sc. (2002) and Ph. D. (2006) degrees from Hong Kong University of Science and Technology. He was a global COE postdoctoral fellow in the Institute for Materials Research (2017-2018), Tohoku University, and was appointed assistant professor (2008–2010) in the Institute for International Advanced Interdisciplinary Research, Tohoku University. He joined Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo as an assistant professor (2010–2011) and lecturer (2011–2013). He moved briefly to the Center for Emergent Matter Science in RIKEN as a senior research scientist (2013). Since 2013 he has been an associate professor of the Zernike Institute of Advanced Materials, University of Groningen. He started the superconductivity research from studying ultrasmall carbon nanotubes. During his stay in Japan, he initiated field-effect control of superconductivity in a broad range of layered materials combining the micro-fabrication from graphene research and the high efficiency field-effect technique from ionic gating.

报告摘要
Field effect control of ion movement was recently proved to be an effective way to dope various materials electrostatically. By introducing a so-called electric double layer transistor, the electrochemical version of a conventional field effect transistor (FET), highly efficient FETs can be made with the capability of accumulating dense carriers (~1014 cm-2) mediated by movement of organic ions at transistor channel surface, which is attracting growing interests in the field of quantum phase control of many materials. In this talk, I will present an overview on the experimental efforts using ionic gating as an effective tool to control metal-insulator transition, superconductivity, and ferromagnetism, which will be followed by recent new results of observing competing Rashba and Zeeman type effective magnetic fields originated from ionic gating, which not only create strong electric field but also break the out-of-plane inversion symmetry of layered semiconducting transition metal dichalcogenides. By applying this method to a broader range of materials (for instance, varieties of thin films and single crystals), this organic/inorganic interface is promising to act as a rich playground for novel electronic properties and an emerging source of new device functionalities.

References:
1.   J.M. Lu, O. Zheliuk, Q.H. Chen, I. Leermakers, N.E. Hussey, U. Zeitler, and J.T. Ye “Full superconducting dome of strong Ising protection in gated monolayer WS2”, (2018) www.pnas.org/cgi/doi/10.1073/pnas.1716781115.
2.   J. M. Lu, O. Zheliuk, I. Leermakers, Noah F. Q. Yuan, U. Zeitler, K. T. Law, and J. T. Ye, “Evidence of two-dimenional Ising Superconductivity in Gated MoS2”, Science 350, 1353 (2015).
3.   J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, et al., “Superconducting Dome in a Gate Tuned Band Insulator”, Science 338, 1193 (2012).

邀 请 人:胡江平(电话:8264 8166)
联 系 人:李园园(电话:8264 9364)


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