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InP/InAs Heterostructure Nanowires towards Telecom-band Optoelectronic Devices

Date: 2019-12-26
Time: 10:00
Venue: M236
Speaker: Dr. Guoqiang Zhang (章国强)

NTT Basic Research Laboratories and NTT Nanophotonics Center,
NTT Corporation, Kanagawa, Japan.


章国强,博士,1975年生,现任日本NTT物性科学基础研究所量子光学器件研究室主任研究员。1993~2000年于浙江大学获得学士及硕士学位,2004年日本国立静冈大学电子工学研究所获得博士学位,2004-2006年日本国立静冈大学电子工学研究所任COE研究员,2006-2008年日本NTT物性科学基础研究所量子光学器件研究室博士后研究员,2008-至今,日本NTT物性科学基础研究所量子光学器件研究室主任研究员。长期从事III-V族半导体纳米线的制备及其在量子光学器件领域基础与应用研究。已在Science Advances,Nature Materials, Nano Letters,ACS Nano 等学术期刊发表论文30余篇。


One motivation for the very intense research in III-V compound semiconductor nanowire field is that nanowire structures can offer new opportunities to main-stream semiconductors. In this talk, firstly, I will describe a CMOS-compatible synthesis approach, i.e. gold-free indium-particle-catalyzed (or self-catalyzed) vapor-liquid-solid growth mode. The approach enables the growth of InP/InAs heterostructure nanowire and lasing in telecom band at room temperature [1]. We have also realized mid-IR lasing by using InAs nanowires with hexagonal crystalline structure [2]. Controllable formation of p-i-n structure along the axial direction enables light emitting diodes to operate at room temperature with telecom-band electroluminescence. A novel approach will then be described for site control of indium nanoparticle by self-assembly process for InP/InAs nanowire array [3]. Finally, I will describe an exceptional growth phenomenon in self-catalyzed vapor-liquid-solid mode that the catalyst particle size can be continuously tailored by modulating III-V source flow ratio.

[1] Zhang, G., et al., Science Advances (2019) 5 (2), eaat8896.
[2] Sumikura, H., Zhang, G., et al., Nano Letters (2019) 19 (11), 8059.
[3] Zhang, G., et al., ACS Nano (2015) 9 (11), 10580.

邀  请 人:李俊杰 (电话:82649097)