The 341st forum: Van der Waals Integration beyond 2D Materials
University of California, Los Angeles, CA 90095, USA
Dr. Duan received his B.S. Degree from University of Science and Technology of China in 1997, and Ph.D. degree from Harvard University in 2002. He was a Founding Scientist and then Manager of Advanced Technology at Nanosys Inc., a nanotechnology startup founded based partly on his doctoral research. Dr. Duan joined UCLA with a Howard Reiss Career Development Chair in 2008, and was promoted to Associate Professor in 2012 and Full Professor in 2013. Dr. Duan’s research interest includes nanoscale materials, devices and their applications in future electronic, energy and health technologies. Dr. Duan has published over 200 papers with over 40,000 citations, and holds over 40 issued US patents.
Semiconductor heterostructures are central for all modern electronic and optoelectronic devices. Traditional semiconductor heterostructures are typically created through a “chemical integration” approach with covalent bonds, and generally limited to the materials with highly similar lattice symmetry and lattice constants due to lattice/processing compatibility requirement. In contrast, van der Waals integration, where preformed materials are ‘physically assembled’ together through van der Waals interactions. The flexible “physical assembly” approach is not limited to materials that have similar lattice structures or require similar synthetic conditions. It can thus open up vast possibilities for damage-free integration of highly distinct materials beyond the traditional limits posed by lattice matching or process compatibility requirements.
In this talk, I will discuss van der Waals integration as a general material integration approach beyond 2D materials for creating diverse heterostructures with minimum integration-induced damage and interface states, enabling high-performing devices difficult to achieve with conventional ‘chemical integration’ approach. A particular highlight is the creation of van der Waals metal/semiconductor contacts free of interfacial disorder and Fermi level pinning, thus for the first time enabling experimental validation of the Schottky-Mott rule first proposed in 1930s.
邀 请 人：梁文杰（电话：8264 8159）
联 系 人：李园园（电话：8264 9364）