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Ultra intense Ti: sapphire laser facility with peak power of 350 TW
 
Focused ion beam etching & deposition system
 
Low-temperature high-magnetic field UHV dual STM
 
VUV laser-based angle-resolved photoemission spectrometer
 
Scanning Electron Microscope and X-Ray Microanalysis System
 
Temperature-jump nanosecond time-resolved transient mid-IR absorbance difference spectrometer
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