High Performance Electronics based on low dimensional materials
Institute of Microelectronics, Peking University
Electronic devices based on atomic layered two-dimensional materials and related heterostructures have recently attracted great research attention due to their unique electronic properties and the feasibility of hybrid integration, which provide the unprecedented opportunities for various van der Waals heterojunctions. We have studied the performance improvement based on black phosphorus and molybdenum disulfide from the carrier velocity and operating frequency. High frequency transistor and circuits operating at gigahertz range based on molybdenum disulfide are demonstrated with record high maximum oscillation frequency. High hole velocity of up to 1.5 x 107 cm/s has been demonstrated for short channel BP transistors and transport approaching ballistic limit are predicted for ultimately scaled channel length. Moreover, bandgap engineering using lateral heterojunctions has been carried out with multifunctionality for reconfigurable logic operations, showing great promise for future electronics. Ultrathin indium tin oxide has been also systematically investigated for high performance electronics with high on off rate and frequency response.
 S. Li, M. Tian, Q. Gao, M. Wang, T. Li, Q. Hu, X. Li and Y. Wu*, Nature Materials 18, 1091–1097 (2019)
 X. Li, Z. Yu, X. Xiong, T. Li, T. Gao, R. Wang, R. Huang and Y. Wu*, Science Advances 5, eaau3194, (2019).
 Q. Gao, Z. Zhang, X. Xu, J. Song, X. Li and Y. Wu*, Nat. Commun. 9: 4778 (2018).
 M. Huang, S. Li, Z. Zhang, X. Xiong, X. Li and Y. Wu*, Nat. Nanotech. 12: 1148–1154 (2017).
吴燕庆，北京大学研究员。2009年在美国普渡大学获得本科及博士学位。博士毕业后曾在IBM沃森研究中心担任研究员及华中科技大学教授。围绕后摩尔新材料电子器件与电路开展了多项原创性工作。近五年来作为通讯作者在包括Nature Materials, Nature Nanotechnology, Nature Communications, Science Advances等顶级国际学术期刊与IEDM在内的国际会议上发表论文50余篇。论文总他引次数超过5500余次，h因子31。应邀在多个国际会议上作邀请报告。