NTT Basic Research Laboratories and NTT Nanophotonics Center,
NTT Corporation, Kanagawa, Japan.
E-mail: guoqiang.zhang.ta@hco.ntt.co.jp

报告人简介：

章国强，博士，1975年生，现任日本NTT物性科学基础研究所量子光学器件研究室主任研究员。1993~2000年于浙江大学获得学士及硕士学位，2004年日本国立静冈大学电子工学研究所获得博士学位，2004-2006年日本国立静冈大学电子工学研究所任COE研究员，2006-2008年日本NTT物性科学基础研究所量子光学器件研究室博士后研究员，2008-至今，日本NTT物性科学基础研究所量子光学器件研究室主任研究员。长期从事III-V族半导体纳米线的制备及其在量子光学器件领域基础与应用研究。已在Science Advances，Nature Materials, Nano Letters，ACS Nano 等学术期刊发表论文30余篇。

报告摘要：

One motivation for the very intense research in III-V compound semiconductor nanowire field is that nanowire structures can offer new opportunities to main-stream semiconductors. In this talk, firstly, I will describe a CMOS-compatible synthesis approach, i.e. gold-free indium-particle-catalyzed (or self-catalyzed) vapor-liquid-solid growth mode. The approach enables the growth of InP/InAs heterostructure nanowire and lasing in telecom band at room temperature [1]. We have also realized mid-IR lasing by using InAs nanowires with hexagonal crystalline structure [2]. Controllable formation of p-i-n structure along the axial direction enables light emitting diodes to operate at room temperature with telecom-band electroluminescence. A novel approach will then be described for site control of indium nanoparticle by self-assembly process for InP/InAs nanowire array [3]. Finally, I will describe an exceptional growth phenomenon in self-catalyzed vapor-liquid-solid mode that the catalyst particle size can be continuously tailored by modulating III-V source flow ratio.

[1] Zhang, G., et al., Science Advances (2019) 5 (2), eaat8896.
[2] Sumikura, H., Zhang, G., et al., Nano Letters (2019) 19 (11), 8059.
[3] Zhang, G., et al., ACS Nano (2015) 9 (11), 10580.

邀  请 人：李俊杰 （电话：82649097）