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Understanding Defect and Doping Physics in Semiconductors: from Equilibrium to Extreme Nonequilibrium

Date: 2021-05-19
Time: 10:30
Venue: M255
Speaker: 黄兵



It is known that defects or dopants can fundamentally determine the overall electronic structures of semiconductors. Here I will give an introduction on our recent works in this field: under equilibrium conditions, we have developed a unified theory to understand the strain-dependent defect solution, defect levels, and Fermi energy pinning effects, and we also show that new spin-orbital coupling effects may be hidden in the harmful deep-level defects; under nonequilibrium conditions, we have developed theories to understand the formation of complex defects in the surface or interface of semiconductors, and we have developed a unified formula to understand the plasmonic excitation and proposed a new transport model to realize ideal charge transport in semiconductor superlattices; under extreme-nonequilibrium conditions, we are developing methods to understand the time-dependent defect formation and evolution in semiconductors and their effects on the fundamental electronic structures of semiconductors.


B. Huang obtained his B.S. in Physics College, Jilin Univ. in 2005 and Ph.D. in Physics Depart. Tsinghua Univ. in 2010, respectively. During 2010-2015, he worked at National Renewable Energy Lab., Oak Ridge National Lab. and Univ. Utah as Postdoc or Research Assistant. He joined Beijing Computational Research Center in Sept. 2015 as an assistant professor and promoted to (tenured) associate professor in 2020. He holds a joint faculty position in Depart. Of Physics, Beijing Normal University. His research focuses on computational semiconductor physics and defect physics in semiconductors.